650V/150A IGBT模块
650V 沟槽栅 场终止工艺 650V Trench Gate Field-Stop Process
低电磁干扰 Low EMI
低开关损耗 Low Switching Losses
VCEsat 正温度系数 VCEsat with Positive Temperature Coefficient
低热阻三氧化二铝（Al2O3）衬底 Al2O3 Substrate with Low Thermal Resistance
紧凑型设计 Compact Design
集成的安装夹使安装坚固 Rugged Mounting Due to Integrated Mounting Clamps
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