650V/300A IGBT模块
I型NPC三电平逆变模块 I type NPC Three−Level Inverter Module
650V沟槽栅
场截止工艺 650V Trench Gate Field-Stop Process
内置直流电容 Integrated DC capacitor
低VCEsat
低开关损耗 Low VCEsat
VCEsat 正温度系数 VCEsat with Positive Temperature Coefficient
低热阻三氧化二铝（Al2O3）衬底 Al2O3 Substrate with Low Thermal Resistance
紧凑型&低电感设计 Compact and low inductance Design
采用铜基板技术 Using copper substrate technology
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