1200V/80A IGBT模块
混合电压拓扑 Mixed Voltage Component Topology
沟槽栅
场截止工艺 Trench Gate Field-Stop Process
低电磁干扰 Low EMI
低VCEsat 低开关损耗 Low VCEsat Low Switching Losses
VCEsat 正温度系数 VCEsat with Positive Temperature Coefficient
低热阻三氧化二铝（Al2O3）衬底 Al2O3 Substrate with Low Thermal Resistance
紧凑型&低电感设计 Compact and low inductance Design
采用DBC技术的隔离散热器 Isolated Heatsink using DBC technology
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