650V/60A IGBT+FRD
650V 沟槽栅
场截止工艺
650V Trench Gate
Field-Stop Process
低开关损耗
Low Switching Losses
正温度系数
Positive Temperature Coefficient in VCEsat
低电磁干扰
Low EMI
柔和、快速恢复反并联二极管
Very Soft, Fast Recovery Anti-Parallel Diode
最高结温175℃
Maximum Junction Temperature 175℃
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