1200V/10A IGBT+FRD
1200V 沟槽栅
场截止工艺
1200V Trench Gate
Field-Stop Process
低开关损耗
Low Switching Losses
正温度系数
Positive Temperature Coefficient in VCEsat
10μs短路能力
10μs Short Circuit Capability
最高结温175℃
Maximum Junction Temperature 175℃
低电磁干扰
Low EMI
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